Dr Steven Hepplestone

Publications

_{Copyright Notice: Any articles made available for download are for personal use only. Any other use requires prior permission of the author and the copyright holder.}

| 2019 | 2018 | 2017 | 2015 | 2014 | 2013 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2004 |

2019

• Taylor NT, Davies FH, Davies SG, Price CJ, Hepplestone SP. (2019) The Fundamental Mechanism Behind Colossal Permittivity in Oxides, Advanced Materials, volume 31, no. 51, pages 1904746-1904746, DOI:10.1002/adma.201904746. [PDF]

2018

• Mohamed AH, Oxland R, Aldegunde M, Hepplestone SP, Sushko PV, Kalna K. (2018) Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS, Solid-State Electronics, volume 142, pages 31-35, DOI:10.1016/j.sse.2018.01.006.

2017

• Hepplestone SP, Taylor NT, Davies F. (2017) First principles electronic and elastic properties of fresnoite Ba2TiSi2O8, Materials Research Express, volume 4, pages 125904-125904, DOI:10.1088/2053-1591/aa99e8. [PDF]

2015

• Aldegunde M, Hepplestone SP, Sushko PV, Kalna K. (2015) Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts, Journal of Physics: Conference Series, volume 647, no. 1, DOI:10.1088/1742-6596/647/1/012030. [PDF]
• Chambers SA, Du Y, Gu M, Droubay TC, Hepplestone SP, Sushko PV. (2015) Dominance of interface chemistry over the bulk properties in determining the electronic structure of epitaxial metal/perovskite oxide heterojunctions, Chemistry of Materials, volume 27, no. 11, pages 4093-4098, DOI:10.1021/acs.chemmater.5b01118. [PDF]
• Schusteritsch G, Hepplestone SP, Pickard CJ. (2015) First-principles structure determination of interface materials: The NixInAs nickelides, Physical Review B - Condensed Matter and Materials Physics, volume 92, no. 5, DOI:10.1103/PhysRevB.92.054105. [PDF]

2014

• Aldegunde M, Hepplestone SP, Sushko PV, Kalna K. (2014) Multi-scale simulations of a Mo/n⁺-GaAs Schottky contact for nano-scale III-V MOSFETs, Semiconductor Science and Technology, volume 29, no. 5, DOI:10.1088/0268-1242/29/5/054003.
• Aldegunde M, Kalna K, Hepplestone SP, Sushko PV. (2014) Multi-scale simulations of metal-semiconductor contacts for nano-MOSFETs, 2014 International Workshop on Computational Electronics, IWCE 2014, DOI:10.1109/IWCE.2014.6865836.
• Hepplestone SP, Sushko PV. (2014) Effect of metal intermixing on the Schottky barriers of Mo(100)/GaAs(100) interfaces, Journal of Applied Physics, volume 116, no. 19, DOI:10.1063/1.4902009. [PDF]

2013

• Aldegunde M, Hepplestone SP, Sushko PV, Kalna K. (2013) Multi-scale simulation of transport via a Mo/n⁺-GaAs schottky contact, Materials Research Society Symposium Proceedings, volume 1553, DOI:10.1557/opl.2013.1057.

2011

• Srivastava GP, Hepplestone SP. (2011) Theory of phonon conductivity of semiconductor superlattices, Materials Research Society Symposium Proceedings, volume 1347, pages 8-13, DOI:10.1557/opl.2011.1312.
• Hepplestone SP, Srivastava GP. (2011) Lattice dynamics and thermal properties of phononic semiconductors, PHYSICAL REVIEW B, volume 84, no. 11, article no. ARTN 115326, DOI:10.1103/PhysRevB.84.115326. [PDF]

2010

• Hepplestone SP, Srivastava GP. (2010) Theory of interface scattering of phonons in superlattices, PHYSICAL REVIEW B, volume 82, no. 14, article no. ARTN 144303, DOI:10.1103/PhysRevB.82.144303. [PDF]
• Hepplestone SP, Srivastava GP. (2010) Phononic gaps in thin semiconductor superlattices, JOURNAL OF APPLIED PHYSICS, volume 107, no. 4, article no. ARTN 043504, DOI:10.1063/1.3285415. [PDF]

2009

• Hepplestone SP, Srivastava GP. (2009) Anharmonic lifetime of phonons in nanophononic semiconductors, Materials Research Society Symposium Proceedings, volume 1172, pages 66-71.

2008

• Hepplestone SP, Srivastava GP. (2008) Hypersonic modes in nanophononic semiconductors, Phys Rev Lett, volume 101, no. 10, DOI:10.1103/PhysRevLett.101.105502. [PDF]

2007

• Hepplestone SP, Srivastava GP. (2007) Frequency and Temperature Dependence of Anharmonic Phonon Relaxation Rate in Carbon Nanotubes, PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, volume 61, pages 414-419, DOI:10.1088/1742-6596/61/1/083. [PDF]
• Hepplestone SP, Srivastava GP. (2007) Low-temperature mean-free path of phonons in carbon nanotubes, Journal of Physics: Conference Series, volume 92, no. 1, DOI:10.1088/1742-6596/92/1/012076.

2006

• Hepplestone SP, Ciavarella AM, Janke C, Srivastava GP. (2006) Size and temperature dependence of the specific heat capacity of carbon nanotubes, Surface Science, volume 600, no. 18, pages 3633-3636, DOI:10.1016/j.susc.2005.12.070.
• Srivastava GP, Hepplestone SP. (2006) Phonon-phonon interactions in single-wall carbon nanotubes, Physical Review B, volume 74, no. 16, DOI:10.1103/PhysRevB.74.165420.
• Hepplestone SP, Srivastava GP. (2006) The intrinsic lifetime of low-frequency zone-centre phonon modes in silicon nanowires and carbon nanotubes, Applied Surface Science, volume 252, no. 21, pages 7726-7729, DOI:10.1016/j.apsusc.2006.03.059.
• Hepplestone SP, Srivastava GP. (2006) Lattice dynamics of silicon nanostructures, Nanotechnology, volume 17, no. 13, pages 3288-3298, DOI:10.1088/0957-4484/17/13/035.

2004

• Hepplestone SP, Srivastava GP. (2004) The lattice dynamics of rectangular silicon nanowires, Physica Status Solidi C: Conferences, volume 1, no. 11, pages 2617-2620, DOI:10.1002/pssc.200405389.

Showing 23 publications from Symplectic.