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Dr Derek W Palmer

Honorary University Fellow

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My Current Research Interests

    At the University of Exeter I am associated with the Quantum Systems and Nanomaterials research group.  I have special research interest in the structures, properties and effects of lattice defects, impurities and defect-impurity complexes in inorganic crystalline conductors and in graphene as a semiconductor, including in electronic and opto-electronic devices. The lattice defects, including vacancies, interstitials and dislocations may be formed during the growth of the semiconductor crystal, or by subsequent processing such as by ion implantation doping or by ion-beam milling to produce semiconductor samples of required dimensions.    For investigation, lattice defects can be introduced in a controlled way by irradiation using electrons, inert-gas ions or gamma rays, and I have research interest and expertise in such defect creation. 

 

Previous Research

    My research in the School of Physics and Astronomy at the University of Sussex comprised experimental investigations of lattice point-defects in metals and semiconductors, those defects being created into those solids at cryogenic temperatures by in-situ irradiation using 0.5 to 3.0 MeV light ions (protons and helium ions) and electrons from the University's Van de Graaff particle accelerator.    In the metals, the presence, structures and thermal stabilities of the defects were studied using ion channelling methods, and in the semiconductors (germanium, silicon, GaAs and InP) by electrical techniques, especially capacitance-voltage-temperaure depth profiling and by majority-carrier and minority-carrier Deep Level Transient Spectroscopy, including investigation of applied uniaxial stress on the electronic states of the lattice defects.

 

Research Publications during the period in which I have been associated with the University of Exeter, School of Physics


R Jones, H Pinto, D W Palmer, J P Goss and P R Briddon, 2013
Diamond Conference, Univ of Warwick, 08-11 July 2013
"Theory of the diffusion and aggregation of nitrogen in diamond"

H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Öberg, 2012
Journal of Nanoscience and Nanotechnology 12 (2012) 1–5
(Proceedings of the E-MRS Meeting held in Strasbourg, France in May 2011)
“Ab Initio Studies of Fluorine Passivation on the Electronic Structure of the NV- Defect in Nanodiamond”

H Pinto, D W Palmer, R Jones, J  P Goss, P R Briddon and S Oberg, 2012
Diamond Conference, Univ of Warwick, 09-12 July 2012
"Ab-initio study of the diffusion of NV defects in diamond"

H Pinto, D W Palmer, R Jones, J  P Goss, P R Briddon and S Oberg, 2012
NanoTP-Theory Meeting, Aveiro, Portugal, June 2012
"A theoretical study of the diffusion of nitrogen-vacancy defect in diamond"

H Pinto , R Jones, D W Palmer, J P Goss , P R Briddon and S Oberg, 2012
Phys Stat Solidi -A 1-4 (2012)
(Proceedings of the Hasselt Diamond Workshop, March 2012)
'On the diffusion of NV defects in diamond'

H Pinto, D W Palmer, R Jones. J P Goss, A K Tiwari et al, 2012
Physical Review B 86 (2012) 045313 (eight pages)
‘First principles studies of the effect of (001) surface terminations on the electronic properties of the negatively charged nitrogen-vacancy defect in diamond”

H Pinto, R Jones, D W Palmer, J P Goss, P R Briddon and S Oberg, 2011
Phys Stat Solidi A 208 (2011) 2045-2050
"Theory of the surface effects on the luminescence of the NV^- defect in nanodiamond"
(Proceedings, Hasselt Diamond Workshop (SBDD XVI), Hasselt, Belgium, 21-23 February 2011)

H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Oberg, 2011
NanoteC11 Conference, Nantes, France, 31 August - 03 Sept 2011
"Ab-initio studies of different surface terminations on the electronic properties of NV- in diamond"

H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Oberg, 2011
Diamond Conference, University of Warwick, UK,  04-07 July 2011
"Surface effects on the luminescence of the NV- defect in diamond"

D W. Palmer, 2011
Invited Review Chapter in the Elsevier Encyclopdia" Comprehensive Semiconductor Science and Technology"
(Bhattacharya P, Fornari R and Kamimura H, eds.), (Elsevier, Amsterdam, 2011),  Volume 4, pp. 390-447
"Electronic Energy Levels in Group-III Nitrides"

H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Oberg, 2011
E-MRS Meeting, Strasbourg, France, May 2011, to be published in the Meeting Proceedings
"Ab-initio studies of surface-fluorination effect on the electronic structure of the NV- defect in nanodiamond"

H Pinto, R Jones, D W Palmer, J P Goss, P R Briddon and S Oberg, 2011
Hasselt Diamond Workshop (SBDD XVI), Hasselt, Belgium, 21-23 February 2011,
to be published in the Proceedings, Phys. Status Solidi A, 2011
"Theory of the surface effects on the luminescence of the NV- defect in nanodiamond"

Derek W Palmer, Karsten Bothe & Jan Schmidt, 2007
Phys Rev B 75 (2007) 035210
"Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon"

Derek W Palmer, Karsten Bothe & Jan Schmidt, 2007
Phys Rev B 75 (2007) 035210
"Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon"

J Schmidt, K Bothe, D Macdonald, J Adey, R Jones, and D W Palmer, 2006
J. Mater. Res. 21 (2006) 5-12 (published as an "Outstanding Paper" of the MRS 2005 Spring Meeting)
"Electronically Stimulated Degradation of Silicon Solar Cells"

A Nylandsted Larsen, A Mesli,  K Bonde Nielsen, H Kortegaard Nielsen, L Dobaczewski, J. Adey, R. Jones,
D.W. Palmer, P. R. Briddon, and S Oberg, 2006
Phys Rev Lett 97 (2006) 106402
"E Center in Silicon Has a Donor Level in the Band Gap"

J Schmidt, K Bothe, D Macdonald, J Adey, R Jones, and D W Palmer, 2005
Proceedings, 20th European Photo-Voltaic Conference, 06-10 June 2005, Barcelona, Spain
"Mechanisms of Light-Induced Degradation in Mono- and Multi-Crystalline Silicon Solar Cells"

J Adey, R Jones, D W Palmer, P R Briddon and S Öberg, 2005
Phys Rev B 71 (2005) 165211
"Theory of Boron-Vacancy Complexes in Silicon"

J Schmidt, K Bothe, D Macdonald, J Adey, R Jones and D W Palmer, 2005
Mater. Res. Soc. Symp. Proc. 864 (2005) E6.1.1 (Proc. MRS Spring Meeting, 2005, San Francisco, USA)
"Electronically Stimulated Degradation of Crystalline Silicon Solar Cells"

J Schmidt, K Bothe, D Macdonald, J Adey, R Jones and D W Palmer, 2004
Proceedings, Fourth Internat. Symposium on Advanced Science & Technology of Silicon Materials
22-26 November 2004, Kona, Hawaii, USA
"Mechanisms of Light-Induced Degradation in c-Si Solar Cells"

J Adey, R Jones, D W Palmer, P R Briddon and S Öberg, 2004
Phys Rev Lett 93 (2004) 055504
and Erratum (printing error in a figure caption) in Phys Rev Lett 93 (2004) 169904
"Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells"

W O Siyanbola and D W Palmer, 2002
Materials Engineering 13 (2002) 179-186
"Investigation of the Anomalous Signature of the (Ec-0.19eV) Defect produced in Proton-Implanted n-GaAs"

W O Siyanbola and D W Palmer, 2002
Materials Engineering 13 (2002) 89-97
"Production Rate of the Electron Trap E3 in Proton-Irradiated n-GaAs Schottky Diodes"

D W Palmer, 2001
in 'Crystal Growth of Materials for Energy Production and Energy Saving Applications'
(R Fornari and L Sorba (Editors): Edizioni ETS, Italy, 2001), pages 148-171
Proceedings, International Study School, ICTP Trieste, 05-10 March 2001
"Point Defects & Non-Doping Impurities in Semiconductors and Their Characterisation by Electrical Techniques"

D W Palmer, V A Dravin, V M Konnov, E A Bobrova, N N LoÏko, S G Chernook and A A Gippius, 2001
Semiconductors 35 (2001) 325-330
(Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 3, 2001, pp. 339-344)
"Characterization of Electroluminescent Structures based on Gallium Arsenide Ion-Implanted with
Ytterbium and Oxygen"

D W Palmer
Microelectronics Journal 30 (1999) 665-672
Shortened Version of Invited Lecture at the Journées Maghreb-Europe Conference MADICA'98
("Les Materiaux et Leurs Applications aux Dispositifs Capteurs Physiqes, Chimiques et Biologiques")
held in Monastir, Tunisia, 09-11 November 1998
"Characterisation of Semiconductor Heterostructures by Capacitance Methods"

V A Dravin, V M Konnov, D W Palmer et al
Fourth Russian Conf. on the Physics of Semiconductors,
held in Novosibirsk, 25-29 October 1999
"Characterisation of Electroluminescent Structures of Yb-Implanted GaAs"
Abstract in Russian published in the Conference Booklet, Page 270.
Full Paper Published in Russian in the Conference Proceedings, with English translation in Physics &
Technology of Semiconductors (Nauka/Interperiodica, Russia) No. 3, 2001.

 

My Semiconductor Information Website

    Separately from the University of Exeter but related to my research interests there, I am the owner and web-master of the Semiconductor Information website http://www.semiconductors.co.uk which provides, for the world-wide community of semiconductors scientists and technologists, detailed up-to-date information on the physical properties of semiconductors, on forthcoming conferences & meetings, on relevant scienfific societies etc.  


 

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