Photo of Prof Gyaneshwar Srivastava

Prof Gyaneshwar Srivastava

Publications

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| To Appear | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1998 | 1997 | 1996 | 1995 | 1994 | 1993 | 1992 | 1991 | 1990 | 1989 | 1988 | 1987 | 1986 | 1985 | 1984 | 1983 | 1982 | 1981 | 1980 | 1979 | 1978 | 1977 | 1976 | 1975 | 1974 | 1973 | 1972 | 1971 | 1970 | 1969 |

To Appear

  • Tütüncü HM, Srivastava GP, Tse JS. Structural and dynamical properties of As overlayers on the GaAs(110) surface, Surface Science.

2017

2016

2015

2014

2013

2012

2011

2010

2009

2008

2007

2006

2005

2004

2003

  • Miwa RH, Miotto R, Ferraz AC, Srivastava GP. (2003) Ab initio study of the GaAs(001)-In(4×2) surface, Physical Review B - Condensed Matter and Materials Physics, volume 67, no. 4, pages 453251-453255.
  • Çakmak M, Srivastava GP, Ellialtloǧlu S. (2003) Adsorption of Te on Ge(001): Density-functional calculations, Physical Review B - Condensed Matter and Materials Physics, volume 67, no. 20, pages 2053141-2053149.
  • Miwa RH, Schmidt TM, Srivastava GP. (2003) Bi covered Si(111) surface revisited, Journal of Physics Condensed Matter, volume 15, no. 17, pages 2441-2447, DOI:10.1088/0953-8984/15/17/302.
  • Thachepan S, Okuyama H, Aruga T, Nishijima M, Ando T, Baǧci S, Tütüncü HM, Srivastava GP. (2003) Surface vibrations of diamond C(001)(2×1), Physical Review B - Condensed Matter and Materials Physics, volume 68, no. 3, pages 333101-333104.
  • Çakmak M, Shaltaf R, Srivastava GP, Ellialtioǧlu S. (2003) Ab initio study of the one-monolayer Sb/Si(0 0 1) interface, Surface Science, volume 532-535, pages 661-665, DOI:10.1016/S0039-6028(03)00454-0.
  • Çakmak M, Srivastava GP. (2003) Theoretical study of dangling-bond wires on the H-terminated Si surface, Surface Science, volume 532-535, pages 556-559, DOI:10.1016/S0039-6028(03)00118-3.

2002

2001

  • Miwa RH, Srivastava GP. (2001) Ab initio study of the bi-covered gaAs(111)B surface, Physical Review B - Condensed Matter and Materials Physics, volume 64, no. 19, pages 1953281-1953287.
  • Miwa RH, Srivastava GP. (2001) Theoretical investigations of Sb-induced (3 × 8) and (1 × 3) reconstructions on the GaAs(111)B surface, Physical Review B - Condensed Matter and Materials Physics, volume 63, no. 12, pages 1253411-1253418.
  • Bülbül MM, Çakmak M, Srivastava GP, Çolakoǧlu K. (2001) Effect of hydrogenation on the adsorption of Ge on Si(001), Physical Review B - Condensed Matter and Materials Physics, volume 64, no. 15, pages 1553181-1553186.
  • Miotto R, Srivastava GP, Ferraz AC. (2001) Dissociative adsorption of PH3 on the Si(001) surface, Physical Review B - Condensed Matter and Materials Physics, volume 63, no. 12, pages 1253211-1253219.
  • Srivastava GP. (2001) Theory of thermal conduction in nonmetals, MRS Bulletin, volume 26, no. 6, pages 445-450.
  • Bulbul MM, Cakmak M, Srivastava GP, Colakoglu K. (2001) Effect of hydrogenation on the adsorption of Ge on Si(001), PHYSICAL REVIEW B, volume 64, no. 15, article no. ARTN 155318. [PDF]
  • Miwa RH, Srivastava GP. (2001) Atomic geometry, electronic structure and image state for the Si(1 1 1)-In(4×1) nanowire, Surface Science, volume 473, no. 1-2, pages 123-132, DOI:10.1016/S0039-6028(00)00960-2.
  • Miotto R, Srivastava GP, Ferraz AC. (2001) Dissociative adsorption of PH3 on the Si(001) surface, PHYSICAL REVIEW B, volume 63, no. 12, article no. ARTN 125321, DOI:10.1103/PhysRevB.63.125321. [PDF]
  • Tutuncu HM, Srivastava GP. (2001) Electronic and vibrational properties of the As:InP(110) and Sb:InP(110) surfaces, Phys. Rev. B, volume 65.
  • Tutuncu HM, Srivastava GP. (2001) Electronic and vibrational properties of the As:InP(110) and Sb:InP(110) surfaces, Phys. Rev. B, volume 65, DOI:10.1103/PhysRevB.65.035319.
  • Srivastava, G.P.. (2001) Geometry, electrons, phonons and reactions on Si(001) surfaces, Computer Physics Communications, volume 137, pages 143-162.
  • Çakmak M, Srivastava GP. (2001) Adsorption of GeH2 on the Si(0 0 1) surface, Surface Science, volume 482-485, no. PART 1, pages 26-31, DOI:10.1016/S0039-6028(00)01002-5.
  • Miotto, R, Miwa, R.H.. (2001) A Comparative Study of Dissociative Adsorption of\r NH3, PH3 and AsH3 on Si(001){(2x1)\r , Journal of Chemical Physics, volume 114, no. 21, pages 9549-9556.
  • Miwa RH, Srivastava GP. (2001) Ab initio study of the Bi-covered GaAs(111)B surface, PHYSICAL REVIEW B, volume 64, no. 19, article no. ARTN 195328, DOI:10.1103/PhysRevB.64.195328. [PDF]
  • Miwa RH, Srivastava GP. (2001) Sb-covered GaAs(1 1 1)B-(3 x 8) surface: A theoretical study, Surface Science, volume 482-485, no. PART 2, pages 1308-1313.
  • Miwa, R.H.. (2001) Theoretical investigations of Sb induced (3x8) and (1x3) reconstructions on the GaAs(111)B surface\r , Physical Review B: Condensed Matter and Materials Physics, volume 63, no. 12.
  • Srivastava, G.P., Ikonic, Z. (2001) 'Electronic Structure of AgBr(111)twin boundaries', Journal of the Physics and Chemistry of Solids, volume 62, no. 3, pages 579-584.
  • Miotto R, Srivastava GP, Ferraz AC. (2001) First-principles calculations of the adsorption and dissociation of PH3 on Si(0 0 1)-(2 × 1), Surface Science, volume 482-485, no. PART 1, pages 160-165, DOI:10.1016/S0039-6028(00)01045-1.
  • Tütüncü HM, Miotto R, Srivastava GP. (2001) A comparative study of surface phonons on CdTe(1 1 0) and InSb(1 1 0), Surface Science, volume 482-485, no. PART 1, pages 580-586, DOI:10.1016/S0039-6028(00)01067-0.

2000

1999

  • Ferraz AC, Srivastava GP. (1999) Passivation of InP(001) by sulfur, Applied Surface Science, volume 142, no. 1, pages 23-27, DOI:10.1016/S0169-4332(98)00732-6.
  • Tütüncü HM, Srivastava GP. (1999) Atomic geometry, electronic structure, and vibrational properties of the AlSb(110) and GaSb(110) surfaces, Physical Review B - Condensed Matter and Materials Physics, volume 59, no. 7, pages 4925-4932.
  • Gay SCA, Srivastava GP. (1999) Ab initio pseudopotential calculations for electronic and geometric structure of mixed Si-Ge dimers on the Si(001)-(1 × 2) and Si(001)-(2 × 4) surfaces, Surface Science, volume 433, pages 909-914, DOI:10.1016/S0039-6028(99)00528-2.
  • Miotto R, Srivastava GP, Ferraz AC. (1999) First-principles pseudopotential study of GaN and BN (110) surfaces, Surface Science, volume 426, no. 1, pages 75-82, DOI:10.1016/S0039-6028(99)00282-4.
  • Lambert K, Srivastava GP. (1999) Confinement of optical phonon modes in thin (GaAs)n(AlAs)n superlattices, Physica B: Condensed Matter, volume 263-264, pages 517-521, DOI:10.1016/S0921-4526(98)01252-6.
  • Tütüncü HM, Srivastava GP. (1999) Electronic and vibrational properties of the GaSb( 110) surface, Surface Science, volume 433-435, pages 357-361.
  • Çakmak M, Srivastava GP. (1999) Adsorption of partially and fully dissociated H2S molecules on the Si(001) and Ge(001) surfaces, Physical Review B - Condensed Matter and Materials Physics, volume 60, no. 8, pages 5497-5505.
  • Miotto R, Srivastava GP, Ferraz AC. (1999) The role of generalised gradient approximation in structural and electronic properties of bulk and surface of β-GaN and GaAs, Surface Science, volume 433-435, pages 377-381.
  • Ferraz AC, Srivastava GP. (1999) Passivation of InP(001) by sulfur, APPLIED SURFACE SCIENCE, volume 142, no. 1-4, pages 23-27, DOI:10.1016/S0169-4332(98)00732-6. [PDF]
  • Tütüncü HM, Srivastava GP. (1999) Surface dynamics of AlSb(1 1 0) and GaP(1 1 0), Physica B: Condensed Matter, volume 263-264, pages 400-403, DOI:10.1016/S0921-4526(98)01241-1.
  • Tütüncü HM, Jenkins SJ, Srivastava GP. (1999) Characterization of the Ge(001)/Si-(2×1) surface using lattice dynamics, Physical Review B - Condensed Matter and Materials Physics, volume 60, no. 15, pages 10648-10651.
  • Miotto R, Srivastava GP, Ferraz AC. (1999) Role of generalized-gradient approximation in structural and electronic properties of bulk and surface of β-GaN and GaAs, Physical Review B - Condensed Matter and Materials Physics, volume 59, no. 4, pages 3008-3014.
  • Çakmak M, Srivastava GP. (1999) Ab-initio study of the adsorption of H2S onto the Si (001) surface, Surface Science, volume 433-435, pages 420-424.
  • Srivastava GP. (1999) Theoretical Modelling of Semiconductor Surfaces (Microscopic studies of electrons and phonons), World Scientific.
  • Srivastava GP. (1999) c-Si surfaces - review of theoretical studies, Properties of Crystalline Silicon, INSPEC.
  • Gay SCA, Srivastava GP. (1999) Pseudopotential studies of co-adsorption of group-V elements and Ge on Si(001) surfaces, Surface Science, volume 443, no. 3, pages 253-264, DOI:10.1016/S0039-6028(99)01016-X.
  • Gay SCA, Srivastava GP. (1999) Dimer length variation for different reconstructions of Si, Ge, and mixed Si-Ge dimers on Si(001) and Ge(001) substrates, Physical Review B - Condensed Matter and Materials Physics, volume 60, no. 3, pages 1488-1491.
  • Tütüncü HM, Gay SCA, Srivastava GP. (1999) Surface phonons on Si(0 0 1)/As(2×1), Physica B: Condensed Matter, volume 263-264, pages 424-428, DOI:10.1016/S0921-4526(98)01402-1.

1998

  • Tütüncü HM, Jenkins SJ, Srivastava GP. (1998) A study of atomic vibrations on Si(001)(2 × 1)-Ge, Applied Surface Science, volume 123-124, pages 151-155.
  • Tütüncü HM, Jenkins SJ, Srivastava GP. (1998) Atomic geometry, electronic structure, and vibrational properties of the Ge(001)(2×1) surface, Physical Review B - Condensed Matter and Materials Physics, volume 57, no. 8, pages 4649-4655.
  • Çakmak M, Srivastava GP. (1998) Adsorption and desorption of S on and off Si(001) studied by ab initio density functional theory, Journal of Applied Physics, volume 84, no. 11, pages 6070-6075.
  • Tütüncü HM, Srivastava GP. (1998) Vibrational properties of ZnSe(110) surface, Surface Science, volume 402-404, pages 649-652.
  • Jenkins SJ, Srivastava GP. (1998) Atomic structure of a monolayer of Ge on Si(001)(2 × 1), Surface Review and Letters, volume 5, no. 1, pages 97-100.
  • Çakmak M, Srivastava GP. (1998) An ab initio calculation of the adsorption of H2S onto InP(110)-(1 × 1) surface, Applied Surface Science, volume 123-124, pages 52-55.
  • Dixon RJ, McConville CF, Jenkins SJ, Srivastava GP. (1998) Structure and stability of the Si(001) c(4 × 4)-Sb surface, Physical Review B - Condensed Matter and Materials Physics, volume 57, no. 20.
  • Tütüncü HM, Jenkins SJ, Srivastava GP. (1998) Vibrational properties of Ge- and Sb-adsorbed Si(001) surfaces, Physical Review B - Condensed Matter and Materials Physics, volume 58, no. 16, pages 10754-10760.
  • Çakmak M, Srivastava GP. (1998) Theoretical study of the GaAs(110)-(1 × 1)-H2S surface, Surface Science, volume 402-404, pages 658-662.
  • Rundell AR, Srivastava GP, Inkson JC, Johnson EA, MacKinnon A. (1998) Composite electron-hole states in GaSb/InAs quantum wells, Physica B: Condensed Matter, volume 249-251, pages 710-713.
  • Tütüncü HM, Çakmak M, Srivastava GP. (1998) Structural, electronic and vibrational properties of the InSb(110) surface, Applied Surface Science, volume 123-124, pages 146-150.
  • Jenkins SJ, Srivastava GP. (1998) Structure and energetics of segregated and nonsegregated Ge(001)/Si(2x1), Physical Review B - Condensed Matter and Materials Physics, volume 57, no. 15, pages 8794-8796.
  • Srivastava GP, Jenkins SJ. (1998) Atomic structure of the GaAs(001)-β2(2 × 4) surface, Surface Review and Letters, volume 5, no. 1, pages 219-222.
  • Tütüncü HM, Srivastava GP. (1998) Calculation of phonon dispersion on the ZnSe(110) surface, Physical Review B - Condensed Matter and Materials Physics, volume 57, no. 7, pages 3791-3794.
  • Çakmak M, Srivastava GP. (1998) Ab initio study of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1×1) surfaces, Physical Review B - Condensed Matter and Materials Physics, volume 57, no. 8, pages 4486-4492.
  • Jenkins SJ, Srivastava GP. (1998) Structural studies of Si(001)/Sb(0.25 ML) -c(4 × 4), Applied Surface Science, volume 123-124, pages 48-51.
  • Jenkins SJ, Srivastava GP, Dixon RJ, McConville CF. (1998) Ab initio calculation of geometry and bonding for overlaid and inlaid models of Si(001)/Sb(0.25 ML)-c(4 × 4), Surface Science, volume 402-404, pages 645-648.
  • Miotto R, Srivastava GP, Ferraz AC. (1998) Dissociative adsorption of NH3 on Si(001)-(2×1), Physical Review B - Condensed Matter and Materials Physics, volume 58, no. 12, pages 7944-7949.
  • Lambert K, Srivastava GP. (1998) Atomic vibrations in thin [111] (GaAs)n(AlAs)n superlattices, Journal of Physics Condensed Matter, volume 10, no. 13, pages 2829-2843, DOI:10.1088/0953-8984/10/13/003.
  • Ikoníc Z, Srivastava GP, Inkson JC. (1998) Electronic-structure calculations of self-organized PbS-Bi2S3-(Ag2S) (113) twinning superlattices, Physical Review B - Condensed Matter and Materials Physics, volume 57, no. 8, pages 4557-4565.
  • Gay SCA, Jenkins SJ, Srivastava GP. (1998) Comparative ab initio pseudopotential studies of (2 x 1) group V overlayers on Si(001), Journal of Physics Condensed Matter, volume 10, no. 35, pages 7751-7768, DOI:10.1088/0953-8984/10/35/009.
  • Jenkins SJ, Srivastava GP. (1998) Thermodynamic evidence for surfactant behaviour of Sb in the growth of Ge on Si(001), Surface Science, volume 398, no. 3.
  • Tütüncü HM, Jenkins SJ, Srivastava GP. (1998) A study of atomic vibrations on Si(001)/Sb(2 × 1), Surface Science, volume 402-404, pages 42-46.
  • Gay SCA, Jenkins SJ, Srivastava GP. (1998) Ab-initio density functional calculations for Si(001)/Bi(1 ML)-(2 × 1), Surface Science, volume 402-404, pages 641-644.
  • Joubert DP, Srivastava GP. (1998) Coupling-constant dependence of the density functional correlation energy, Journal of Chemical Physics, volume 109, no. 13, pages 5212-5220, DOI:10.1063/1.477138.
  • Casagrande D, Srivastava GP, Ferraz AC. (1998) Theoretical calculations for Si(001)-(2 × 1)Cl, Surface Science, volume 402-404, pages 653-657.

1997

  • Tuetuencue HM, Srivastava GP. (1997) Comparative study of atomic vibrations on GaAs(110) and InAs(110), Surface Science, volume 377-379, no. 1-3, pages 304-307, DOI:10.1016/S0039-6028(96)01398-2.
  • Tütüncü HM, Srivastava GP. (1997) Theory of localized phonons on III-V(110) surfaces, Journal of Physics and Chemistry of Solids, volume 58, no. 4, pages 685-694.
  • Tütüncü HM, Jenkins SJ, Srivastava GP. (1997) Theoretical studies of atomic vibrations on the Si(001)(2×1) surface, Physical Review B - Condensed Matter and Materials Physics, volume 56, no. 8, pages 4656-4664.
  • Srivastava GP, Jenkins SJ. (1997) Atomic structure and bonding on GaAs(001)/Sb(2 × 4), Surface Science, volume 377-379, pages 23-26.
  • Rundell AR, Srivastava GP, Inkson JC. (1997) In-plane magnetic field studies of InAs/GaSb superlattices, Physical Review B - Condensed Matter and Materials Physics, volume 55, no. 8, pages 5177-5183.
  • Ikonić Z, Srivastava GP, Inkson JC. (1997) Electronic structure of natural self-organized PbS-Bi2S3 twinning superlattices, Physical Review B - Condensed Matter and Materials Physics, volume 55, no. 15, pages 9286-9289.
  • Çakmak M, Srivastava GP. (1997) Calculation of atomic geometry, electronic states, and bonding for the S-deposited InP(110) surface, Physical Review B - Condensed Matter and Materials Physics, volume 56, no. 4, pages 1928-1935.
  • Jenkins SJ, Srivastava GP. (1997) Electrostatic implications for Sb-mediated growth of Ge on the Si(001) surface, Surface Science, volume 384, no. 1-3.
  • Srivastava GP. (1997) Theory of semiconductor surface reconstruction, Reports on Progress in Physics, volume 60, no. 5, pages 561-613, DOI:10.1088/0034-4885/60/5/002.
  • Çakmak M, Srivastava GP. (1997) A theoretical study of sulphur adsorption on InP(110), Surface Science, volume 377-379, pages 592-596.
  • Jenkins SJ, Srivastava GP. (1997) Energetic evidence for mixed dimer growth on the Si(001)/Ge(2 × 1) surface, Surface Science, volume 377-379, pages 887-890.
  • Tütüncü HM, Srivastava GP. (1997) A comparative study of atomic vibrations on GaAs(110) and InAs(110), Surface Science, volume 377-379, pages 304-307.
  • Lambert K, Srivastava GP. (1997) Atomic vibrations in thin (GaAs)n(AlAs)n superlattices, Physical Review B - Condensed Matter and Materials Physics, volume 56, no. 20, pages 13387-13392.
  • Ferraz AC, Srivastava GP. (1997) Atomic geometry and electronic structure of S/InP(001), Surface Science, volume 377-379, pages 121-124.
  • Tütüncü HM, Jenkins SJ, Srivastava GP. (1997) Phonon modes for the symmetric and asymmetric dimer models of the Si(001)(2 × 1) surface, Surface Science, volume 377-379, pages 335-338.
  • Jenkins SJ, Srivastava GP. (1997) Comparative study of Sb bonding on group-IV semiconductor (001) substrates, Physical Review B - Condensed Matter and Materials Physics, volume 56, no. 15, pages 9221-9223.

1996

  • Srivastava GP, Jenkins SJ. (1996) Theoretical studies of GaAs(001)-Ge(2 × 1) and (1 × 2) structures, Surface Science, volume 352-354, pages 416-419, DOI:10.1016/0039-6028(95)01172-2.
  • Jenkins SJ, Srivastava GP, Inkson JC. (1996) Density functional and quasi-particle calculations on the InP(110) surface, SURFACE SCIENCE, volume 352, pages 776-780, DOI:10.1016/0039-6028(95)01227-3. [PDF]
  • Jenkins SJ, Srivastava GP. (1996) Theoretical evidence concerning mixed dimer growth on the Si(001)(2 x 1)-Ge surface, Journal of Physics Condensed Matter, volume 8, no. 36, pages 6641-6651, DOI:10.1088/0953-8984/8/36/016.
  • Srivastava GP, Jenkins SJ. (1996) Atomic geometry and bonding on the GaAs(001)- beta 2(2 x 4) surface from ab initio pseudopotential calculations, Phys Rev B Condens Matter, volume 53, no. 19, pages 12589-12592. [PDF]
  • Schmidt WG, Bechstedt F, Srivastava GP. (1996) Phonons at III-V (110) surfaces, Surface Science, volume 352-354, pages 83-88, DOI:10.1016/0039-6028(95)01095-5.
  • Srivastava GP. (1996) Surface dynamics of InP(110) and GaP(110) with the adiabatic bond charge model, 23nd International Conference on the Physics of Semiconductors, Berlin, Germany, Proc 23nd Int Conf on Phys of Semicond (Berlin), volume 2, pages 859-862.
  • Tütünc HM, Srivastava GP. (1996) Surface phonons on InP(110) with the adiabatic bond-charge model, Phys Rev B Condens Matter, volume 53, no. 23, pages 15675-15681. [PDF]
  • Tan W, Inkson JC, Srivastava GP. (1996) Microscopic calculation of valence-band states in semiconductor structures in the presence of a magnetic field, Phys Rev B Condens Matter, volume 54, no. 20, pages 14623-14632. [PDF]
  • Jenkins SJ, Srivastava GP. (1996) Bonding and structure of the Si(001) (2 × 1)-Sb surface, Surface Science, volume 352-354, pages 411-415, DOI:10.1016/0039-6028(95)01171-4.
  • Schmidt WG, Bechstedt F, Srivastava GP. (1996) Adsorption of group-V elements on III-V (110) surfaces, Surface Science Reports, volume 25, no. 5-7, pages 141-223.
  • Tütüncü HM, Srivastava GP. (1996) Phonon dispersion on a GaAs(110) surface studied using the adiabatic bond charge model, Journal of Physics Condensed Matter, volume 8, no. 10, pages 1345-1358, DOI:10.1088/0953-8984/8/10/007.

1995

  • Umerski A, Srivastava GP. (1995) Erratum: Geometry and electronic band structure of an ordered monolayer deposition of Bi on III-V(110) semiconductor surfaces (Physical Review B(1995) 52, 15, (11519)), Physical Review B, volume 52, no. 15, DOI:10.1103/PhysRevB.52.11519.
  • Ikonic Z, Srivastava GP, Inkson JC. (1995) Direct optical transitions in indirect semiconductors: The case of Ge twinning superlattices, Phys Rev B Condens Matter, volume 52, no. 3, pages 1474-1476. [PDF]
  • Jenkins SJ, Srivastava GP, Inkson JC. (1995) Density functional and quasiparticle calculations on the GaP(110) surface, Surface Science, volume 331-333, no. PART B, pages 1238-1243, DOI:10.1016/0039-6028(95)00286-3.
  • Schmidt WG, Srivastava GP. (1995) III-V(110) Sb(1 ML): structural and dynamical properties, Surface Science, volume 331-333, no. PART A, pages 540-545, DOI:10.1016/0039-6028(95)00304-5.
  • Ikonic Z, Srivastava GP, Inkson JC. (1995) Electronic properties of (111) twin boundaries and twinning superlattices in lead sulfide, Phys Rev B Condens Matter, volume 52, no. 19, pages 13734-13737. [PDF]
  • Ikonic Z, Srivastava GP, Inkson JC. (1995) Electronic properties of PbS(111) twin boundaries and twinning superlattices, Superlattices and Microstructures, volume 17, no. 4, pages 393-393.
  • Umerski A, Srivastava GP. (1995) Geometry and electronic band structure of an ordered monolayer deposition of Bi on III-V(110) semiconductor surfaces, Phys Rev B Condens Matter, volume 51, no. 4, pages 2334-2346. [PDF]
  • Ikonic Z, Srivastava GP, Inkson JC. (1995) Electronic properties of pbs(111) twin boundaries and twinning superlattices, Superlattices and Microstructures, volume 17, no. 4, pages 393-396, DOI:10.1006/spmi.1995.1068.
  • Schmidt WG, Bechstedt F, Srivastava GP. (1995) III-V(110) surface dynamics from an ab initio frozen-phonon approach, Phys Rev B Condens Matter, volume 52, no. 3, pages 2001-2007. [PDF]
  • Ikonic Z, Srivastava GP, Inkson JC. (1995) Electronic structure of (GaAs)m(AlAs)n superlattices grown in the, Phys Rev B Condens Matter, volume 52, no. 11, pages 7830-7833. [PDF]
  • Ikonic Z, Srivastava GP, Inkson JC. (1995) Optical properties of twinning superlattices in diamond-type and zinc-blende-type semiconductors, Phys Rev B Condens Matter, volume 52, no. 19, pages 14078-14085. [PDF]
  • Umerski A, Srivastava GP. (1995) Erratum: Geometry and electronic band structure of an ordered monolayer deposition of Bi on III-V(110) semiconductor surfaces, Phys Rev B Condens Matter, volume 52, no. 15. [PDF]
  • Srivastava GP, Umerski A. (1995) Geometry and electronic structure of selenium-treated InP(110), Surface Science, volume 331-333, no. PART A, pages 590-593, DOI:10.1016/0039-6028(95)00323-1.

1994

1993

  • Umerski A, Srivastava GP. (1993) Geometry and electronic band structure of GaAs(110)-Bi (1 ML), Phys Rev B Condens Matter, volume 48, no. 11, pages 8450-8453. [PDF]
  • SRIVASTAVA GP. (1993) ATOMIC GEOMETRY, ELECTRONIC STATES AND BONDING AT THE GAP(110)-SB(L ML) INTERFACE (VOL 5, PG 4697, 1993), JOURNAL OF PHYSICS-CONDENSED MATTER, volume 5, no. 44, pages 8485-8485. [PDF]
  • Srivastava GP. (1993) Discussion on paper "Control of electrical barriers at semiconductor heterojunctions by interface doping", Phil Trans of the Royal Soc: Physical sciences 344, 585.
  • Schmidt WG, Srivastava GP. (1993) Chemisorption of aluminium on GaAs(110), Journal of Physics: Condensed Matter, volume 5, no. 49, pages 9025-9036, DOI:10.1088/0953-8984/5/49/005.
  • Ikonic Z, Srivastava GP, Inkson JC. (1993) Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors, Phys Rev B Condens Matter, volume 48, no. 23, pages 17181-17193. [PDF]
  • Ikonic Z, Srivastava GP, Inkson JC. (1993) Twinning superlattices, Solid State Communications, volume 86, no. 12, pages 799-802, DOI:10.1016/0038-1098(93)90111-Y.
  • Srivastava GP. (1993) Atomic geometry, electronic states and bonding at the GaP(11)-Sb(1 ML) interface, Journal of Physics: Condensed Matter, volume 5, no. 27, pages 4695-4710, DOI:10.1088/0953-8984/5/27/014.
  • Tan W, Inkson JC, Srivastava GP. (1993) Disorder effects on tunneling through one-dimensional double-barrier quantum-well structures: A coherent-potential approximation, Phys Rev B Condens Matter, volume 47, no. 8, pages 4372-4378. [PDF]
  • BALL MA, SRIVASTAVA GP. (1993) CALCULATION OF PSEUDOATOM INFORMATION IN GALLIUM-ARSENIDE, JOURNAL OF PHYSICS-CONDENSED MATTER, volume 5, no. 16, pages 2511-2520, DOI:10.1088/0953-8984/5/16/009. [PDF]
  • Jenkins SJ, Srivastava GP, Inkson JC. (1993) Simple approach to self-energy corrections in semiconductors and insulators, Phys Rev B Condens Matter, volume 48, no. 7, pages 4388-4397. [PDF]
  • Ferraz AC, Srivastava GP. (1993) Atomic relaxation and electronic states in ultrathin Ge/ZnSe superlattices, Semiconductor Science and Technology, volume 8, no. 1, pages 67-72, DOI:10.1088/0268-1242/8/1/011.
  • SRIVASTAVA GP, PASHLEY MD. (1993) STM STUDIES OF FERMI-LEVEL PINNING ON THE GAAS(001) SURFACE - DISCUSSION, PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, volume 344, no. 1673, pages 543-543. [PDF]
  • Srivastava GP. (1993) Atomic geometry and electronic structure of a monolayer of Sb on (110) GaAs and InP, Phys Rev B Condens Matter, volume 47, no. 24, pages 16616-16619. [PDF]
  • IKONIC Z, SRIVASTAVA GP, INKSON JC. (1993) CALCULATION OF X-VALLEY INTERSUBBAND OPTICAL-TRANSITIONS LINEWIDTH IN [111] GROWN ALAS/(GAAL)AS QUANTUM-WELLS, SOLID STATE COMMUNICATIONS, volume 85, no. 4, pages 327-330, DOI:10.1016/0038-1098(93)90025-I. [PDF]

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1985

  • Williams R, Srivastava GP, McGovern I. (1985) Electronic structure of Si(111) surfaces, Electronic properties of Surfaces, 71-133.
  • Srivastava GP, Martins JL, Zunger A. (1985) Atomic structure and ordering in semiconductor alloys, Phys Rev B Condens Matter, volume 31, no. 4, pages 2561-2564, DOI:10.1103/PhysRevB.31.2561. [PDF]
  • Srivastava GP, Kunc K. (1985) Phonons in germanium along the [110] direction: 'Direct' approach, Phonon Physics (Publ:World Scientific Publ Pte LTd Singapore 1985), pages 953-955.
  • Zunger A, Srivastava GP, Martins JL. (1985) Atomic structure and ordering in III-V semiconductor alloys, Bull Am Phys Soc 30, 602, no. 30.

1984

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1971

  • SRIVASTA.GP, VERMA GS. (1971) CHOICE OF TRIAL FUNCTION FOR CALCULATION OF THERMAL RESISTIVITY DUE TO ELECTRON PHONON SCATTERING, SOLID STATE COMMUN, volume 9, no. 23, pages 2077-&.
  • SRIVASTAVA GP, VERMA GS. (1971) TEMPERATURE DEPENDENCE OF BOUNDS ON THERMAL RESISTANCE DUE TO U-PROCESSES, PHYS STATUS SOLIDI B, volume 47, no. 2, pages 669-&.

1970

  • Srivastava GP, Verma GS. (1970) Variational treatment of the Ziman Limit of thermal resistance due to umklapp processes, Solid State Phys and Nucl Phys (India), volume 13C, pages 531-534.

1969

  • Srivastava GP, Singh DP, Verma GS. (1969) Three-phonon processes and third-order atomic coupling constants, Solid State Phys and Nucl Phys (India), volume 12C, pages 187-190.

Showing 499 publications from Symplectic.

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