Publications

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| To Appear | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | Patents |

To Appear

2018

2017

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2015

2014

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2012

2011

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2005

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2003

2002

2001

  • (2001) Effect of hydrogenation on the adsorption of (formula presented) on (formula presented), Physical Review B - Condensed Matter and Materials Physics, volume 64, no. 15, DOI:10.1103/PhysRevB.64.155318.
  • Bulbul Mm , Cakmak M , Srivastava Gp , Colakoglu K . (2001) Effect of hydrogenation on the adsorption of Ge on Si(001), PHYSICAL REVIEW B, volume 64, no. 15, article no. ARTN 155318. [PDF]
  • Bulbul Mm , Çakmak M , Srivastava Gp , Çolakoǧlu K . (2001) Effect of hydrogenation on the adsorption of Ge on Si(001), Physical Review B - Condensed Matter and Materials Physics, volume 64, no. 15, pages 1553181-1553186.
  • Gruzberg Ia , Hirschfeld Pj , Shytov Av . (2001) Comment on "density of states of disordered two-dimensional crystals with half-filled band" [2] (multiple letters), Physical Review Letters, volume 87, no. 23.
  • Gruzberg Ia , Hirschfeld Pj , Shytov Av . (2001) Comment on "density of states of disordered two-dimensional crystals with half-filled band", Physical Review Letters, volume 87, no. 23.
  • Gruzberg Ia , Hirschfeld Pj , Shytov Av . (2001) Comment on "Density of states of disordered two-dimensional crystals with half-filled band", Phys Rev Lett, volume 87, no. 23, DOI:10.1103/PhysRevLett.87.239703. [PDF]
  • Levitov Ls , Shytov Av , Halperin Bi . (2001) Effective action of a compressible quantum Hall state edge: Application to tunneling, Physical Review B - Condensed Matter and Materials Physics, volume 64, no. 7, pages 753221-7532222, DOI:10.1103/PhysRevB.64.075322.
  • Miotto R, Miwa RH. (2001) A Comparative Study of Dissociative Adsorption ofr NH3, PH3 and AsH3 on Si(001){(2x1)r, Journal of Chemical Physics, volume 114, no. 21, pages 9549-9556.
  • Miotto R , Srivastava Gp , Ferraz Ac . (2001) Dissociative adsorption of PHandlt;infandgt;3andlt;/infandgt; on the Si(001) surface, Physical Review B - Condensed Matter and Materials Physics, volume 63, no. 12, DOI:10.1103/PhysRevB.63.125321.
  • Miotto R , Srivastava Gp , Ferraz Ac . (2001) Dissociative adsorption of PH3 on the Si(001) surface, PHYSICAL REVIEW B, volume 63, no. 12, article no. ARTN 125321, DOI:10.1103/PhysRevB.63.125321. [PDF]
  • Miotto R , Srivastava Gp , Ferraz Ac . (2001) First-principles calculations of the adsorption and dissociation of PHandlt;infandgt;3andlt;/infandgt;on Si(0 0 1)-(2 × 1), Surface Science, volume 482-485, no. PART 1, pages 160-165, DOI:10.1016/S0039-6028(00)01045-1.
  • Miwa RH. (2001) Theoretical investigations of Sb induced (3x8) and (1x3) reconstructions on the GaAs(111)B surfacer, Physical Review B: Condensed Matter and Materials Physics, volume 63, no. 12.
  • Miwa Rh , Srivastava Gp . (2001) Theoretical investigations of Sb-induced (3 ⨯ 8) and (1 ⨯ 3) reconstructions on the GaAs(111) B surface, Physical Review B - Condensed Matter and Materials Physics, volume 63, no. 12, DOI:10.1103/PhysRevB.63.125341.
  • Miwa Rh , Srivastava Gp . (2001) Ab initio study of the bi-covered gaAs(111)B surface, Physical Review B - Condensed Matter and Materials Physics, volume 64, no. 19, pages 1953281-1953287.
  • Miwa Rh , Srivastava Gp . (2001) Ab initio study of the Bi-covered GaAs(111)B surface, PHYSICAL REVIEW B, volume 64, no. 19, article no. ARTN 195328, DOI:10.1103/PhysRevB.64.195328. [PDF]
  • Miwa Rh , Srivastava Gp . (2001) Sb-covered GaAs(1 1 1)B-(3 x 8) surface: A theoretical study, Surface Science, volume 482-485, no. PART 2, pages 1308-1313.
  • Miwa Rh , Srivastava Gp . (2001) Atomic geometry, electronic structure and image state for the Si(1 1 1)-In(4×1) nanowire, Surface Science, volume 473, no. 1-2, pages 123-132, DOI:10.1016/S0039-6028(00)00960-2.
  • Nikolaev Vv , Portnoi Me , Eliashevich I . (2001) Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure, Physica Status Solidi (A) Applied Research, volume 183, no. 1, pages 177-182, DOI:10.1002/1521-396X(200101)183:1<177::AID-PSSA177>3.0.CO;2-H.
  • Plaut AS, Thoms S. (2001) Fermi-edge singularities in a one-dimensional electron system in magnetic field, Solid State Communications, volume 119, no. 1, pages 55-58.
  • Portnoi Me , Galbraith I . (2001) Exciton/free-carrier plasma in GaN-based quantum wells: scattering and screening, Physica Status Solidi (A) Applied Research, volume 183, no. 1, pages 87-90, DOI:10.1002/1521-396X(200101)183:1<87::AID-PSSA87>3.0.CO;2-O.
  • Sassetti M , Mariani E , Napoli F , Kramer B . (2001) Signatures of Tomonaga-Luttinger liquid behaviour in resonant Raman scattering on semiconductor quantum wires, PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, volume 87, pages 1225-1226. [PDF]
  • Srivastava GP. (2001) Geometry, electrons, phonons and reactions on Si(001) surfaces, Computer Physics Communications, volume 137, pages 143-162.
  • Srivastava GP, Ikonic Z. (2001) 'Electronic Structure of AgBr(111)twin boundaries', Journal of the Physics and Chemistry of Solids, volume 62, no. 3, pages 579-584.
  • Srivastava Gp . (2001) Theory of thermal conduction in nonmetals, MRS Bulletin, volume 26, no. 6, pages 445-450, DOI:10.1557/mrs2001.114.
  • Tstsul‘nikov Af , Krestnikov Il , Lundin Wv , Sakharov Av , Bedarev Da , Usikov As , Ber B , Tret‘yakov Vv , Alferov Z , Ledentsov Nn . (2001) Formation of GaAsN nanoinsertions in a GaN matrix, 25TH INTERNATIONAL CONF ON THE PHYSICS OF SEMICONDUCTORS.
  • Tutuncu Hm , Srivastava Gp . (2001) Electronic and vibrational properties of the As:InP(110) and Sb:InP(110) surfaces, Phys. Rev. B, volume 65.
  • Tutuncu Hm , Srivastava Gp . (2001) Electronic and vibrational properties of the As:InP(110) and Sb:InP(110) surfaces, Phys. Rev. B, volume 65, DOI:10.1103/PhysRevB.65.035319.
  • Tutuncu Hm , Miotto R , Srivastava Gp . (2001) A comparative study of surface phonons on CdTe(1 1 0) and InSb(1 1 0), Surface Science, volume 482-485, no. PART 1, pages 580-586, DOI:10.1016/S0039-6028(00)01067-0.
  • Çakmak M , Srivastava Gp . (2001) Adsorption of GeH2 on the Si(0 0 1) surface, Surface Science, volume 482-485, no. PART 1, pages 26-31, DOI:10.1016/S0039-6028(00)01002-5.

2000

Showing 718 publications from Symplectic.


Patents

  • Craciun Mf , Russo S , Withers F , Bointon Th , Martins S . Detector, Patent Number: WO2014111702 A2, WO, 2014..
  • Craciun Mf , Russo S , Bointon Th . Doped graphene, Patent Number: WO2015049490 A1, WO, 2015..
  • Craciun Mf , Russo S . Graphene-based material, Patent Number: KR20140095614 \(A\), Korea, 2014..
  • Craciun Mf , Russo S . Graphene-based material, Patent Number: US20140174513 A1, USA, 2014..

Showing 4 patents from Symplectic.

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