event
Thursday 09 Feb 2012: Double-gated graphene-based devices
Dr Monica Craciun - University of Exeter
Harrison 170 (3D Visualisation Suite) 14:00-15:00
Since its discovery, graphene -a one atom thick carbon layer- and its few layers have granted access to unprecedented physical phenomena. Graphene is establishing a new paradigm in condensed matter physics due to the relativistic nature of its charge carriers. Owing to recent technological developments, became possible to embed graphene materials into double-gated structures [1-6]. This novel device architecture enabled the direct observation of relativistic effects in single layer graphene p-n junctions, and the discovery of unique functionalities in few-layer graphene such as a gate-tuneable band gaps in bilayers [2, 3, 5, 6] and rhombohedral-stacked trilayers [1, 5] and a gate-tuneable band overlap in Bernal-stacked trilayers [3-6]. Double-gated graphene structures thus paved the way for conceptually new device architectures which hold the promise for innovative future applications [3]. In this seminar I will summarize the gamut of novel physical phenomena and unprecedented material functionalities accessible in double-gated graphene-based devices.
References:
[1] Khodkov T, Craciun MF, et al. Electrical transport in suspended and double gated trilayer graphene, Applied Physics Letters, 100, 013114 (2012).
[2] Shioya H, Craciun MF, et al. Gate tunable non-linear currents in bilayer graphene diodes, Applied Physics Letters, 100, 033113 (2012).
[3] Craciun MF, et al. Tuneable electronic properties in graphene, Nano Today, 6, 42 (2011).
[4] Jhang SH, Craciun MF, et al. Stacking-order dependent transport properties of trilayer graphene, Phys. Rev. B, Rapid Communications, 84, 161408 (2011).
[5] Craciun MF, et al. Trilayer graphene is a semimetal with a gate-tunable band overlap, Nat Nanotechnol, 4, 383 (2009).
[6] Russo S, Craciun MF, et al. Double-gated graphene-based devices, New Journal of Physics 11, 095018 (2009).
