The CareRAMM project focuses on the exploration and development of next-generation data storage/memory materials via two main carbon-based routes, namely:

  1. thin films of (sp3-rich) amorphous carbon (a-C) for the provision of high-performance non-volatile resistive memories
  2. graphene-based materials in the form of graphene-oxide (GO) for the provision of non-volatile resistive memories which are additionally suited to flexible electronics applications.

Carbon offers exciting technical capabilities as a data storage and memory material. There are also compelling environmental reasons that make carbon an attractive proposition; it is, for example:

  • Non toxic (to persons or the environment)
  • Not reliant on rare mineral extraction (and the knock-on environmental problems)
  • Expected to have relatively easy 'end of use' disposal/recycling
  • Expected to offer low (total) energy of production (compared to other electronics materials)

In summary, the general aims of the CareRAMM project are to develop advanced carbon-based resistive switching materials, specifically sp3-rich a-C films and graphene-oxide films, for next generation non-volatile data storage applications.

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